To ensure a successful program for all locations, BCICTS will take place during the following timeframes:

New YorkLos AngelesLondonTokyo
Session 19 AM – 11 AM6 AM – 8 AM2 PM – 4 PM11 PM – 1 AM (next day)
Session 25 PM – 7 PM2 PM – 4 PM10 PM – 12 PM7 AM – 9 AM (next day)

*Please note: Day change for those calling in from Tokyo.

The technical committee for BCICTS has lined up an exciting and informative array of speakers for the 2020 conference, below are speaker highlights for your reference:

The IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) technical sub-committees are organized to reflect the rapidly evolving developments in bipolar, BiCMOS and compound semiconductor circuits and devices. Submissions are encouraged in all areas of advanced circuits, devices and modeling, with particular emphasis on:

• Bipolar/BiCMOS devices, circuits and technologies
• 5G ICs, GaN HPAs/LNAs, InP THz PAs
• High Performance RF Switch Technologies
• GaN HEMT and other wide bandgap power devices
• Analog, RF & Microwave ICs
• mmW & THz ICs
• Process & Device Technology
• Modeling/Simulation
• Optical CMOS/SiGe Transceivers
• High Speed Digital, Mixed Signal, and Electro-Optic IC’s

2024 Invited Papers

AuthorAffiliationINVITED PAPER TOPIC
Todd BauerDARPAReview of DARPA’s T-MUSIC Program
Yves GigaseChips Joint UndertakingThe European Chips Act
Hoi LeeUniversity of Texas, DallasHigh-efficiency high-conversion-ratio power delivery circuits for computing applications
Steven CallenderIntelD-Band meets FinFET: Fully-Integrated Transmitter and Receiver Architectures for 100+ Gb/s Links
Eric BryertonVirginia DiodeTrends in mmW & THz Test Equipment
Teruo Jyo, Munehiko NagakaniNTT300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter
Alyosha C. MolnarCornell UniversityN-path mixers beyond CMOS
Pascal ChevalierST MicroelectronicsA 55-nm Flexible SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications
Takuya MaedaUniversity of TokyoCharacterization of ScAlN/GaN Toward Electronic Device Application
Trevor ThorntonArizona State UniversityDiamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT?
Jim SowersMaxar Space InfrastructureIII-V Semiconductors in Commercial Communication Satellite Payloads
Kenle ChenUniversity of Central FloridaLoad Modulated Balanced Amplifiers for Next-G Wireless Communications
Bernhard GroteNXPAdvances in GaN HEMT and GaN PA techniques for base-stations
Lan WeiUniversity of WaterlooA Family of Physics-Based Models for Monolithic GaN Integration
Larry DunleavyModelithics Inc., University of South FloridaPractical Dimensions on Contemporary GaN HEMT Modeling
Alexander RylyakovNokiaNext Generation Optical Transceiver for Data Center Interconnect
Christian ReimerHyperlightIntegrated Photonics in Thin-Film Lithium Niobate
Tsunenobu KimotoKyoto UniversitySiC based power devices for extreme temp operations
Zlatan StanojevicGlobal TCADProcess to Parasitics Simulations
Randy WolfGlobalFoundriesState of the Art in PA Design for Wireless applications – Opportunities and challenges for compact modeling

Invited Speakers PDF