To ensure a successful program for all locations, BCICTS will take place during the following timeframes:
| New York | Los Angeles | London | Tokyo | |
| Session 1 | 9 AM – 11 AM | 6 AM – 8 AM | 2 PM – 4 PM | 11 PM – 1 AM (next day) |
| Session 2 | 5 PM – 7 PM | 2 PM – 4 PM | 10 PM – 12 PM | 7 AM – 9 AM (next day) |
*Please note: Day change for those calling in from Tokyo.
The technical committee for BCICTS has lined up an exciting and informative array of speakers for the 2020 conference, below are speaker highlights for your reference:
The IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) technical sub-committees are organized to reflect the rapidly evolving developments in bipolar, BiCMOS and compound semiconductor circuits and devices. Submissions are encouraged in all areas of advanced circuits, devices and modeling, with particular emphasis on:
• Bipolar/BiCMOS devices, circuits and technologies
• 5G ICs, GaN HPAs/LNAs, InP THz PAs
• High Performance RF Switch Technologies
• GaN HEMT and other wide bandgap power devices
• Analog, RF & Microwave ICs
• mmW & THz ICs
• Process & Device Technology
• Modeling/Simulation
• Optical CMOS/SiGe Transceivers
• High Speed Digital, Mixed Signal, and Electro-Optic IC’s
2024 Invited Papers
| Author | Affiliation | INVITED PAPER TOPIC |
|---|---|---|
| Todd Bauer | DARPA | Review of DARPA’s T-MUSIC Program |
| Yves Gigase | Chips Joint Undertaking | The European Chips Act |
| Hoi Lee | University of Texas, Dallas | High-efficiency high-conversion-ratio power delivery circuits for computing applications |
| Steven Callender | Intel | D-Band meets FinFET: Fully-Integrated Transmitter and Receiver Architectures for 100+ Gb/s Links |
| Eric Bryerton | Virginia Diode | Trends in mmW & THz Test Equipment |
| Teruo Jyo, Munehiko Nagakani | NTT | 300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter |
| Alyosha C. Molnar | Cornell University | N-path mixers beyond CMOS |
| Pascal Chevalier | ST Microelectronics | A 55-nm Flexible SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications |
| Takuya Maeda | University of Tokyo | Characterization of ScAlN/GaN Toward Electronic Device Application |
| Trevor Thornton | Arizona State University | Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT? |
| Jim Sowers | Maxar Space Infrastructure | III-V Semiconductors in Commercial Communication Satellite Payloads |
| Kenle Chen | University of Central Florida | Load Modulated Balanced Amplifiers for Next-G Wireless Communications |
| Bernhard Grote | NXP | Advances in GaN HEMT and GaN PA techniques for base-stations |
| Lan Wei | University of Waterloo | A Family of Physics-Based Models for Monolithic GaN Integration |
| Larry Dunleavy | Modelithics Inc., University of South Florida | Practical Dimensions on Contemporary GaN HEMT Modeling |
| Alexander Rylyakov | Nokia | Next Generation Optical Transceiver for Data Center Interconnect |
| Christian Reimer | Hyperlight | Integrated Photonics in Thin-Film Lithium Niobate |
| Tsunenobu Kimoto | Kyoto University | SiC based power devices for extreme temp operations |
| Zlatan Stanojevic | Global TCAD | Process to Parasitics Simulations |
| Randy Wolf | GlobalFoundries | State of the Art in PA Design for Wireless applications – Opportunities and challenges for compact modeling |
