Abstract
InP integrated circuit technologies with THz-class device bandwidths boast superior performance for frontend circuit blocks operating at >100 GHz. From 140-300 GHz, InP HEMT technologies have demonstrated the lowest noise figure low noise amplifiers (LNAs) and InP HBT technologies have demonstrated the highest output power and power added efficiency for power amplifiers (PAs). Utilizing InP frontend circuit blocks in future sub-THz phased array systems will require low-loss heterogeneous integration techniques with Silicon beamformer electronics. This talk will present technology considerations for high-performance InP HBTs and review device and MMIC performance. Recent developments to improve back-end-of-line and integration technologies of InP MMICs for future phased array systems will also be discussed.
Bio
Miguel Urteaga (Fellow IEEE) received his M.S. and Ph.D. degrees in Electrical Engineering from the University of California Santa Barbara in 2001 and 2003, respectively. He is currently the director of Foundry Products and Services for Teledyne Scientific Company and manages the advanced device development group. His research is focused on the development of ultra-high speed transistor technologies, primarily in the InP material system. He has led the development of Teledyne’s high performance InP HBT IC technologies. These technologies have been used to demonstrate state-of- the-art integrated circuits ranging from high-speed mixed-signal and digital ICs to mm-wave and THz monolithic integrated circuits. He served as the program manager at Teledyne for the DARPA THz Electronics, Diverse Accessible Heterogeneous Integration (DAHI), Dynamic Range-enhanced Electronics Materials (DREAM) and Electronics for G-band Arrays (ELGAR) programs. programs. He has authored or co-authored over 200 conference and journal publications.
