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Confirmed Plenary and Invited Speakers

Authors Affiliation Title
Kevin Kobayashi Qorvo Darlington’s Evolution – Survival of a Fit RF Amplifier
Abdelsalam Aboketaf Global Foundries Key Challenges of SPICE-Based Compact Modeling for Silicon Photonics
Andrej Ruminantsev MPI Corp. Measurement Progress That Moves the BCICTS Community Forward
Dave Brown BAE Systems High Power, Low Thermal Resistance, X-band GaN HEMTs
Brian Ma University of Texas at Dallas Reliability-Aware Integrated SiC Gate Driver with Online Sequential EMI and Aging Control
Raymound J.E Hueting University of Twente More (than Moore) Electrostatic Doping
Hiu Yung Wong San Jose State University AI and TCAD for Inverse Design and Defect Discovery: From Machine Learning to LLM
Holger Rücker IHP Advances in SiGe-BiCMOS Technology for High-Data-Rate Communication Systems
Arvind Narayanan Global Foundries Enabling High-Speed Communication with Next-Generation SiGe HBTs
Xin Yin imec – Ghent University High-Speed Electronics for AI Scaling
Sensen Li UT Austin Closing the RFIC Design Productivity Gap Through AI-Assisted RFIC Design Automation
Herbert Zirath Chalmers Receiver and Transmitter Multifunction MMICs in InP DHBT and SiGe BiCMOS Technologies for High Datarate Communication and Sensor Systems above 100 GHz
Minoru Fujishima Hiroshima University Structured Compactification for RF Integration
Nicholas Miller Michigan St. University mm-Wave Measurements of GaN HEMTs: Systems, Verification Techniques, and Challenges
Patrick Roblin Ohio State University Characterization of Low-Frequency Memory Effects in GaN HEMTs with a New Real-Time NVNA
Ruilin Wang Arizona State University Toward Predictive Physics-Based Compact Models for GaN HEMTs Across Bias, Geometry, and Temperature

PLATINUM SPONSOR

2026 IEEE BCICTS

 Westin Copley Place
Boston, MA, USA
October 11-14, 2026

Important Dates

07/10/26: Notice to Authors
08/21/26: Late Breaking News Submission
09/09/26: Final Manuscript

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BCICTS

BCICTS brings a long history of international gatherings where distinguished experts present their latest results in bipolar, SiGe BiCMOS, and compound semiconductor circuits, devices, and technology. Learn More

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