Authors Affiliation Title
Kevin Kobayashi Qorvo A Historical Perspective of the RF Darlington Amplifier using III-V Semiconductors
Abdelsalam Aboketaf Global Foundries Silicon Photonics modeling related topics
Andrej Ruminantsev MPI Corp. Advances in mmWave measurements
Dave Brown or Isaac Wildeson BAE Systems Review of GaN Amplifier Development from DARPA THREADS program
Debdeep Jena Cornell University Review of Next Generation Nitrides (AlScN, AlYN, AlBN)
Brian Ma University of Texas at Dallas An Adaptive 3-Level SiC Gate Driver IC with On-Chip Proactive NBTI Effect Mitigation
Wai Tung Ng University of Toronto Co-designing BCD-based gate driver ICs and co-packaging for GaN and SiC power devices
Ray Hueting University of Twente Electrostatic doping in devices
Hiu Yung Wong San Jose State University Machine learning framework for TCAD simulations
Holger Rücker IHP Advances in SiGe BiCMOS development and characterization
Arvind Narayanan Global Foundries Complementary Bipolar Technology
Joyce Poon University of Toronto Low-Power Optical Transceivers for Scale-Up Networks
Xin Yin imec – Ghent University High-speed Opto-Electronic Circuits
Sensen Li UT Austin AI-enabled design methodologies for mmWave RFICs
Herbert Zirath Chalmers Multifunction Millimeterwave Circuits for Novel Communication and Sensor Systems above 100 GHz
Nicholas Miller Michigan St. University Millimeter-Wave Measurements of GaN HEMTs: Systems, Verification Techniques, and Challenges
Patrick Roblin Ohio State University Characterization of Low-Frequency Memory Effects with a new Real-Time NVNA
Kexin Li Arizona State University Toward Predictive Physics-Based Compact Models for GaN HEMTs Across Bias, Geometry, and Temperature